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          ? 2000 IXYS All rights reserved 1 - 2 VRSM V(BR)min VRRM Anode Cathode V V V on stud on stud 900 - 800 DS17-08A DSI17-08A 1300 - 1200 DS17-12A DSI17-12A 1300 1300 1200 DSA17-12A DSAI17-12A 1700 1750 1600 DSA17-16A DSAI17-16A 1900 1950 1800 DSA17-18A DSAI17-18A Only for Avalanche Diodes Symbol Test Conditions Maximum Ratings I IF(RMS)F(AV)M T TVJcase = 125C; 180 sine 25 A = TVJM 40 A PRSM DSA(I) types, TVJ = T VJM, tp = 10 s7kWInternational standard package,JEDEC DO-203 AA (DO-4) IFSM T VVJR = 45C; t = 10 ms (50 Hz), sine 370 A = 0 t = 8.3 ms (60 Hz), sine 400 A T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 320 AVJM t = 10 ms (50 Hz), sine 300 A I2t T VVJR = 45C t = 10 ms (50 Hz), sine 680 A2s = 0 t = 8.3 ms (60 Hz), sine 660 A2s T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 430 AVJM 2s t = 10 ms (50 Hz), sine 450 A2s T TVJ TVJMstg -40...+180 C 180 C -40...+180 C Md Mounting torque 2.2-2.8 Nm 19-25 lb.in. Weight 6gDimensions in mm (1 mm = 0.0394") VRRM = 800-1800 V I F(RMS)= 40 A IF(AV)M = 25 A Features Planar glassivated chips Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Symbol Test Conditions Characteristic Values IR TVJ = TVJM; VR = V RRM 4mA VF IF= 55 A; TVJ = 25 C 1.36 V V r T0 T For power-loss calculations only 0.85 V TVJ = TVJM 8m R RthJCthJH DC current 1.5 K/W DC current 2.1 K/W d dS aA Creepage distance on surface 2.05 mm Strike distance through air 2.05 mm Max. allowable acceleration 100 m/s2 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DS 17 DSI 17 DSA 17 DSAI 17 Rectifier Diode Avalanche Diode A = Anode C = Cathode DO-203 AA 10-32UNF DS DSIA DSA DSAI C C A |